SI1431DH-T1-GE3

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Overview of SI1431DH-T1-GE3

Part NumberSI1431DH-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 30V 1.7A SC70-6
DatasheetsDownload SI1431DH-T1-GE3 Datasheet PDFPDF Icon
Price for SI1431DH-T1-GE3

Specification of SI1431DH-T1-GE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
200mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
3V @ 100A
Gate Charge (Qg) (Max) @ Vgs
4 nC @ 4.5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
950mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-70-6
Package / Case
6-TSSOP, SC-88, SOT-363

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