SI1499DH-T1-GE3

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Overview of SI1499DH-T1-GE3

Part NumberSI1499DH-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 8V 1.6A SC70-6
DatasheetsDownload SI1499DH-T1-GE3 Datasheet PDFPDF Icon
Price for SI1499DH-T1-GE3

Specification of SI1499DH-T1-GE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25C
1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
78mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250A
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 4.5 V
Vgs (Max)
5V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 4 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 2.78W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-70-6
Package / Case
6-TSSOP, SC-88, SOT-363

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