SI2325DS-T1-BE3

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Overview of SI2325DS-T1-BE3

Part NumberSI2325DS-T1-BE3
ManufacturerVishay / Siliconix
DescriptionP-CHANNEL 150-V (D-S) MOSFET
DatasheetsDownload SI2325DS-T1-BE3 Datasheet PDFPDF Icon
Price for SI2325DS-T1-BE3

Specification of SI2325DS-T1-BE3

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25C
530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
510 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
750mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3

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