SI2351DS-T1-E3

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Overview of SI2351DS-T1-E3

Part NumberSI2351DS-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 20V 2.8A SOT23-3
DatasheetsDownload SI2351DS-T1-E3 Datasheet PDFPDF Icon
Price for SI2351DS-T1-E3

Specification of SI2351DS-T1-E3

Status
Obsolete
Package
Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
115mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
5.1 nC @ 5 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3

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