SI3443DV

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Overview of SI3443DV

Part NumberSI3443DV
ManufacturerFairchild Semiconductor
DescriptionMOSFET P-CH 20V 4.4A MICRO6
DatasheetsDownload SI3443DV Datasheet PDFPDF Icon
Price for SI3443DV

Specification of SI3443DV

Status
Obsolete
Series
HEXFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
65mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 4.5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
1079 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Micro6(TSOP-6)
Package / Case
SOT-23-6 Thin, TSOT-23-6

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