SI3456DDV-T1-E3

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Overview of SI3456DDV-T1-E3

Part NumberSI3456DDV-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 30V 6.3A 6TSOP
DatasheetsDownload SI3456DDV-T1-E3 Datasheet PDFPDF Icon
Price for SI3456DDV-T1-E3

Specification of SI3456DDV-T1-E3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
40mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
325 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.7W (Ta), 2.7W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6

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