SI3851DV-T1-E3

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Overview of SI3851DV-T1-E3

Part NumberSI3851DV-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 30V 1.6A 6TSOP
DatasheetsDownload SI3851DV-T1-E3 Datasheet PDFPDF Icon
Price for SI3851DV-T1-E3

Specification of SI3851DV-T1-E3

Status
Active
Series
LITTLE FOOT®
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
200mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id
1V @ 250A (Min)
Gate Charge (Qg) (Max) @ Vgs
3.6 nC @ 5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
830mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6

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