SI3905DV-T1-E3

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Overview of SI3905DV-T1-E3

Part NumberSI3905DV-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET 2P-CH 8V 6-TSOP
DatasheetsDownload SI3905DV-T1-E3 Datasheet PDFPDF Icon
Price for SI3905DV-T1-E3

Specification of SI3905DV-T1-E3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
8V
Current - Continuous Drain (Id) @ 25C
-
Rds On (Max) @ Id, Vgs
125mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id
450mV @ 250A (Min)
Gate Charge (Qg) (Max) @ Vgs
6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.15W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP

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