SI4174DY-T1-GE3

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Overview of SI4174DY-T1-GE3

Part NumberSI4174DY-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 30V 17A 8SO
DatasheetsDownload SI4174DY-T1-GE3 Datasheet PDFPDF Icon
Price for SI4174DY-T1-GE3

Specification of SI4174DY-T1-GE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
985 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 5W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)

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