SI4330DY-T1-E3

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Overview of SI4330DY-T1-E3

Part NumberSI4330DY-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET 2N-CH 30V 6.6A 8-SOIC
DatasheetsDownload SI4330DY-T1-E3 Datasheet PDFPDF Icon
Price for SI4330DY-T1-E3

Specification of SI4330DY-T1-E3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
6.6A
Rds On (Max) @ Id, Vgs
16.5mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.1W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC

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