SI4409DY-T1-E3

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Overview of SI4409DY-T1-E3

Part NumberSI4409DY-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 150V 1.3A 8SO
DatasheetsDownload SI4409DY-T1-E3 Datasheet PDFPDF Icon
Price for SI4409DY-T1-E3

Specification of SI4409DY-T1-E3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25C
1.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
332 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta), 4.6W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)

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