SI4410DY,518

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Overview of SI4410DY,518

Part NumberSI4410DY,518
ManufacturerNXP Semiconductors
DescriptionMOSFET N-CH 30V 8SO
DatasheetsDownload SI4410DY,518 Datasheet PDFPDF Icon
Price for SI4410DY,518

Specification of SI4410DY,518

Status
Obsolete
Series
TrenchMOS™
Package
Tape & Reel (TR),Bulk
Supplier
NXP USA Inc.,Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
10A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)

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