SI6963DQ

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Overview of SI6963DQ

Part NumberSI6963DQ
ManufacturerFairchild Semiconductor
DescriptionP-CHANNEL MOSFET
DatasheetsDownload SI6963DQ Datasheet PDFPDF Icon
Price for SI6963DQ

Specification of SI6963DQ

Status
Active
Series
PowerTrench®
Package
Bulk
Supplier
Rochester Electronics, LLC
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
3.8A (Ta)
Rds On (Max) @ Id, Vgs
43mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1015pF @ 10V
Power - Max
600mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package
8-TSSOP

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