SI7123DN-T1-GE3

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Overview of SI7123DN-T1-GE3

Part NumberSI7123DN-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 20V 10.2A PPAK1212-8
DatasheetsDownload SI7123DN-T1-GE3 Datasheet PDFPDF Icon
Price for SI7123DN-T1-GE3

Specification of SI7123DN-T1-GE3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
10.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
10.6mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
3729 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.5W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK 1212-8
Package / Case
PowerPAK 1212-8

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