SI7501DN-T1-GE3

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Overview of SI7501DN-T1-GE3

Part NumberSI7501DN-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N/P-CH 30V 5.4A 1212-8
DatasheetsDownload SI7501DN-T1-GE3 Datasheet PDFPDF Icon
Price for SI7501DN-T1-GE3

Specification of SI7501DN-T1-GE3

Status
Obsolete
Package
Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel, Common Drain
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
5.4A, 4.5A
Rds On (Max) @ Id, Vgs
35mOhm @ 7.7A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.6W
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
PowerPAK 1212-8 Dual
Supplier Device Package
PowerPAK 1212-8 Dual

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