SI7888DP-T1-GE3

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Overview of SI7888DP-T1-GE3

Part NumberSI7888DP-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 30V 9.4A PPAK SO-8
DatasheetsDownload SI7888DP-T1-GE3 Datasheet PDFPDF Icon
Price for SI7888DP-T1-GE3

Specification of SI7888DP-T1-GE3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
9.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12mOhm @ 12.4A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK SO-8
Package / Case
PowerPAK SO-8

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