SI7901EDN-T1-GE3

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Overview of SI7901EDN-T1-GE3

Part NumberSI7901EDN-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET 2P-CH 20V 4.3A 1212-8
DatasheetsDownload SI7901EDN-T1-GE3 Datasheet PDFPDF Icon
Price for SI7901EDN-T1-GE3

Specification of SI7901EDN-T1-GE3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
4.3A
Rds On (Max) @ Id, Vgs
48mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id
1V @ 800A
Gate Charge (Qg) (Max) @ Vgs
18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.3W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK 1212-8 Dual
Supplier Device Package
PowerPAK 1212-8 Dual

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