SI8465DB-T2-E1

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Overview of SI8465DB-T2-E1

Part NumberSI8465DB-T2-E1
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 20V 4MICROFOOT
DatasheetsDownload SI8465DB-T2-E1 Datasheet PDFPDF Icon
Price for SI8465DB-T2-E1

Specification of SI8465DB-T2-E1

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
104mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
450 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
780mW (Ta), 1.8W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-Microfoot
Package / Case
4-XFBGA, CSPBGA

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