SI8902AEDB-T2-E1

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Overview of SI8902AEDB-T2-E1

Part NumberSI8902AEDB-T2-E1
ManufacturerVishay / Siliconix
DescriptionN-CHANNEL 24-V (D-S) MOSFET
DatasheetsDownload SI8902AEDB-T2-E1 Datasheet PDFPDF Icon
Price for SI8902AEDB-T2-E1

Specification of SI8902AEDB-T2-E1

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
24V
Current - Continuous Drain (Id) @ 25C
11A
Rds On (Max) @ Id, Vgs
28mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250A
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
5.7W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
6-UFBGA
Supplier Device Package
6-Micro Foot (1.5x1)

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