SIA477EDJT-T1-GE3

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Overview of SIA477EDJT-T1-GE3

Part NumberSIA477EDJT-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 12V 12A PPAK SC70-6
DatasheetsDownload SIA477EDJT-T1-GE3 Datasheet PDFPDF Icon
Price for SIA477EDJT-T1-GE3

Specification of SIA477EDJT-T1-GE3

Status
Active
Series
TrenchFET® Gen III
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
13mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
3050 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
19W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK SC-70-6 Single
Package / Case
PowerPAK SC-70-6

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