SIE832DF-T1-GE3

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Overview of SIE832DF-T1-GE3

Part NumberSIE832DF-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 40V 50A 10POLARPAK
DatasheetsDownload SIE832DF-T1-GE3 Datasheet PDFPDF Icon
Price for SIE832DF-T1-GE3

Specification of SIE832DF-T1-GE3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
77 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3800 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
5.2W (Ta), 104W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
10-PolarPAK (S)
Package / Case
10-PolarPAK (S)

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