SIHH250N60EF-T1GE3

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Overview of SIHH250N60EF-T1GE3

Part NumberSIHH250N60EF-T1GE3
ManufacturerVishay / Siliconix
DescriptionEF SERIES POWER MOSFET WITH FAST
DatasheetsDownload SIHH250N60EF-T1GE3 Datasheet PDFPDF Icon
Price for SIHH250N60EF-T1GE3

Specification of SIHH250N60EF-T1GE3

Status
Active
Series
EF
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
250mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
915 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
89W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK 8 x 8
Package / Case
8-PowerTDFN

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