SIHH27N60EF-T1-GE3

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Overview of SIHH27N60EF-T1-GE3

Part NumberSIHH27N60EF-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 600V 29A PPAK 8 X 8
DatasheetsDownload SIHH27N60EF-T1-GE3 Datasheet PDFPDF Icon
Price for SIHH27N60EF-T1-GE3

Specification of SIHH27N60EF-T1-GE3

Status
Active
Series
E
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
100mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
135 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
2609 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
202W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK 8 x 8
Package / Case
8-PowerTDFN

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