SIHU2N80AE-GE3

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Overview of SIHU2N80AE-GE3

Part NumberSIHU2N80AE-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 800V 2.9A TO251AA
Price for SIHU2N80AE-GE3

Specification of SIHU2N80AE-GE3

Status
Active
Series
E
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25C
2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251AA
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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