SIR167DP-T1-GE3

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Overview of SIR167DP-T1-GE3

Part NumberSIR167DP-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 30V 60A PPAK SO-8
DatasheetsDownload SIR167DP-T1-GE3 Datasheet PDFPDF Icon
Price for SIR167DP-T1-GE3

Specification of SIR167DP-T1-GE3

Status
Active
Series
TrenchFET® Gen III
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
111 nC @ 10 V
Vgs (Max)
25V
Input Capacitance (Ciss) (Max) @ Vds
4380 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
65.8W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK SO-8
Package / Case
PowerPAK SO-8

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