SIS590DN-T1-GE3

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Overview of SIS590DN-T1-GE3

Part NumberSIS590DN-T1-GE3
ManufacturerVishay / Siliconix
DescriptionCOMBO N- & P-CHANNEL 100 V (D-S)
DatasheetsDownload SIS590DN-T1-GE3 Datasheet PDFPDF Icon
Price for SIS590DN-T1-GE3

Specification of SIS590DN-T1-GE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25C
2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs
167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK 1212-8 Dual
Supplier Device Package
PowerPAK 1212-8 Dual

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