SIZ200DT-T1-GE3

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Overview of SIZ200DT-T1-GE3

Part NumberSIZ200DT-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH DUAL 30V
DatasheetsDownload SIZ200DT-T1-GE3 Datasheet PDFPDF Icon
Price for SIZ200DT-T1-GE3

Specification of SIZ200DT-T1-GE3

Status
Active
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs
5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
28nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1510pF @ 15V, 1600pF @ 15V
Power - Max
4.3W (Ta), 33W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Supplier Device Package
8-PowerPair (3.3x3.3)

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