SIZ320DT-T1-GE3

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Overview of SIZ320DT-T1-GE3

Part NumberSIZ320DT-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET 2N-CH 25V 30/40A 8POWER33
DatasheetsDownload SIZ320DT-T1-GE3 Datasheet PDFPDF Icon
Price for SIZ320DT-T1-GE3

Specification of SIZ320DT-T1-GE3

Status
Active
Series
PowerPAIR®, TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25C
30A (Tc), 40A (Tc)
Rds On (Max) @ Id, Vgs
8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
8.9nC @ 4.5V, 11.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
660pF @ 12.5V, 1370pF @ 12.5V
Power - Max
16.7W, 31W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Supplier Device Package
8-Power33 (3x3)

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