SIZ710DT-T1-GE3

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Overview of SIZ710DT-T1-GE3

Part NumberSIZ710DT-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET 2N-CH 20V 16A POWERPAIR
DatasheetsDownload SIZ710DT-T1-GE3 Datasheet PDFPDF Icon
Price for SIZ710DT-T1-GE3

Specification of SIZ710DT-T1-GE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Half Bridge)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
16A, 35A
Rds On (Max) @ Id, Vgs
6.8mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
820pF @ 10V
Power - Max
27W, 48W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
6-PowerPair
Supplier Device Package
6-PowerPair

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