SIZ980BDT-T1-GE3

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Overview of SIZ980BDT-T1-GE3

Part NumberSIZ980BDT-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET DUAL N-CH 30V PPAIR 6 X 5
DatasheetsDownload SIZ980BDT-T1-GE3 Datasheet PDFPDF Icon
Price for SIZ980BDT-T1-GE3

Specification of SIZ980BDT-T1-GE3

Status
Active
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual), Schottky
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs
4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V, 79nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
790pF @ 15V, 3655pF @ 15V
Power - Max
3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Supplier Device Package
8-PowerPair (6x5)

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