SQ2361ES-T1_GE3

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Overview of SQ2361ES-T1_GE3

Part NumberSQ2361ES-T1_GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 60V 2.8A SSOT23
DatasheetsDownload SQ2361ES-T1_GE3 Datasheet PDFPDF Icon
Price for SQ2361ES-T1_GE3

Specification of SQ2361ES-T1_GE3

Status
Active
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
177mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
2W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
-
Package / Case
TO-236-3, SC-59, SOT-23-3

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