SQ3419EV-T1_GE3

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Overview of SQ3419EV-T1_GE3

Part NumberSQ3419EV-T1_GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 40V 6.9A 6TSOP
DatasheetsDownload SQ3419EV-T1_GE3 Datasheet PDFPDF Icon
Price for SQ3419EV-T1_GE3

Specification of SQ3419EV-T1_GE3

Status
Active
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
6.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
58mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
11.3 nC @ 4.5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
990 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
5W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6

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