SQJ202EP-T1_GE3

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Overview of SQJ202EP-T1_GE3

Part NumberSQJ202EP-T1_GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET 2N-CH 12V 20A/60A PPAK SO
DatasheetsDownload SQJ202EP-T1_GE3 Datasheet PDFPDF Icon
Price for SQJ202EP-T1_GE3

Specification of SQJ202EP-T1_GE3

Status
Active
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25C
20A, 60A
Rds On (Max) @ Id, Vgs
6.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
975pF @ 6V
Power - Max
27W, 48W
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK SO-8 Dual
Supplier Device Package
PowerPAK SO-8 Dual Asymmetric

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