SQUN702E-T1_GE3

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Overview of SQUN702E-T1_GE3

Part NumberSQUN702E-T1_GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N&P-CH COMMON DRAIN
DatasheetsDownload SQUN702E-T1_GE3 Datasheet PDFPDF Icon
Price for SQUN702E-T1_GE3

Specification of SQUN702E-T1_GE3

Status
Active
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel, Common Drain
FET Feature
-
Drain to Source Voltage (Vdss)
40V, 200V
Current - Continuous Drain (Id) @ 25C
30A (Tc), 20A (Tc)
Rds On (Max) @ Id, Vgs
9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A, 3.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
Input Capacitance (Ciss) (Max) @ Vds
1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
Power - Max
48W (Tc), 60W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount, Wettable Flank
Package / Case
Die
Supplier Device Package
Die

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