SSM6J53FE(TE85L,F)

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Overview of SSM6J53FE(TE85L,F)

Part NumberSSM6J53FE(TE85L,F)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET P-CH 20V 1.8A ES6
DatasheetsDownload SSM6J53FE(TE85L,F) Datasheet PDFPDF Icon
Price for SSM6J53FE(TE85L,F)

Specification of SSM6J53FE(TE85L,F)

Status
Obsolete
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4V
Rds On (Max) @ Id, Vgs
149mOhm @ 600mA, 4V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
7.7 nC @ 4 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
331 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
UFM
Package / Case
3-SMD, Flat Leads

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