STI11NM60ND

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Overview of STI11NM60ND

Part NumberSTI11NM60ND
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 600V 10A I2PAK
DatasheetsDownload STI11NM60ND Datasheet PDFPDF Icon
Price for STI11NM60ND

Specification of STI11NM60ND

Status
Obsolete
Series
FDmesh™ II
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
25V
Input Capacitance (Ciss) (Max) @ Vds
850 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
90W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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