STW55NM60N

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Overview of STW55NM60N

Part NumberSTW55NM60N
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 600V 51A TO247-3
DatasheetsDownload STW55NM60N Datasheet PDFPDF Icon
Price for STW55NM60N

Specification of STW55NM60N

Status
Obsolete
Series
MDmesh™ II
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
60mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
190 nC @ 10 V
Vgs (Max)
25V
Input Capacitance (Ciss) (Max) @ Vds
5800 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
350W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3

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