STW56N65M2-4

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Overview of STW56N65M2-4

Part NumberSTW56N65M2-4
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 650V 49A TO247-4L
DatasheetsDownload STW56N65M2-4 Datasheet PDFPDF Icon
Price for STW56N65M2-4

Specification of STW56N65M2-4

Status
Active
Series
MDmesh™ M2
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
62mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
93 nC @ 10 V
Vgs (Max)
25V
Input Capacitance (Ciss) (Max) @ Vds
3900 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
358W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4

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