TK12V60W,LVQ

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Overview of TK12V60W,LVQ

Part NumberTK12V60W,LVQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 600V 11.5A 4DFN
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Price for TK12V60W,LVQ

Specification of TK12V60W,LVQ

Status
Active
Series
DTMOSIV
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id
3.7V @ 600A
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
890 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
104W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-DFN-EP (8x8)
Package / Case
4-VSFN Exposed Pad

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