TK17V65W,LQ

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Overview of TK17V65W,LQ

Part NumberTK17V65W,LQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionX35 PB-F POWER MOSFET TRANSISTOR
DatasheetsDownload TK17V65W,LQ Datasheet PDFPDF Icon
Price for TK17V65W,LQ

Specification of TK17V65W,LQ

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
210mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id
3.5V @ 900A
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
150C
Mounting Type
Surface Mount
Supplier Device Package
4-DFN-EP (8x8)
Package / Case
4-VSFN Exposed Pad

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