TK32E12N1,S1X

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Overview of TK32E12N1,S1X

Part NumberTK32E12N1,S1X
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N CH 120V 60A TO-220
DatasheetsDownload TK32E12N1,S1X Datasheet PDFPDF Icon
Price for TK32E12N1,S1X

Specification of TK32E12N1,S1X

Status
Active
Series
U-MOSVIII-H
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
13.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 500A
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 60 V
FET Feature
-
Power Dissipation (Max)
98W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

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