TK40S06N1L,LQ

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Overview of TK40S06N1L,LQ

Part NumberTK40S06N1L,LQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 60V 40A DPAK
Price for TK40S06N1L,LQ

Specification of TK40S06N1L,LQ

Status
Active
Series
U-MOSVIII-H
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 200A
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1650 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
88.2W (Tc)
Operating Temperature
175C
Mounting Type
Surface Mount
Supplier Device Package
DPAK+
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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