TK49N65W,S1F

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Overview of TK49N65W,S1F

Part NumberTK49N65W,S1F
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionPB-F POWER MOSFET TRANSISTOR TO2
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Price for TK49N65W,S1F

Specification of TK49N65W,S1F

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
49.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
55mOhm @ 24.6A, 10V
Vgs(th) (Max) @ Id
3.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
6500 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
400W (Tc)
Operating Temperature
150C
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3

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