TK4P60D,RQ

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Overview of TK4P60D,RQ

Part NumberTK4P60D,RQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionPB-F POWER MOSFET TRANSISTOR DP(
DatasheetsDownload TK4P60D,RQ Datasheet PDFPDF Icon
Price for TK4P60D,RQ

Specification of TK4P60D,RQ

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.7Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
150C
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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