TK5P60W5,RVQ

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Overview of TK5P60W5,RVQ

Part NumberTK5P60W5,RVQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionPB-F POWER MOSFET TRANSISTOR DPA
Price for TK5P60W5,RVQ

Specification of TK5P60W5,RVQ

Status
Active
Series
DTMOSIV
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
990mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id
4.5V @ 230A
Gate Charge (Qg) (Max) @ Vgs
11.5 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
370 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
150C
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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