TK6R7P06PL,RQ

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Overview of TK6R7P06PL,RQ

Part NumberTK6R7P06PL,RQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CHANNEL 60V 46A DPAK
DatasheetsDownload TK6R7P06PL,RQ Datasheet PDFPDF Icon
Price for TK6R7P06PL,RQ

Specification of TK6R7P06PL,RQ

Status
Active
Series
U-MOSIX-H
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.7mOhm @ 23A, 10V
Vgs(th) (Max) @ Id
2.5V @ 300A
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1990 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
66W (Tc)
Operating Temperature
175C
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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