TK9J90E,S1E

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Overview of TK9J90E,S1E

Part NumberTK9J90E,S1E
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 900V 9A TO3P
DatasheetsDownload TK9J90E,S1E Datasheet PDFPDF Icon
Price for TK9J90E,S1E

Specification of TK9J90E,S1E

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25C
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.3Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 900A
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P(N)
Package / Case
TO-3P-3, SC-65-3

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