TPCC8008(TE12L,QM)

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Overview of TPCC8008(TE12L,QM)

Part NumberTPCC8008(TE12L,QM)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 30V 25A 8TSON
DatasheetsDownload TPCC8008(TE12L,QM) Datasheet PDFPDF Icon
Price for TPCC8008(TE12L,QM)

Specification of TPCC8008(TE12L,QM)

Status
Obsolete
Series
U-MOSIV
Package
Cut Tape (CT)
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.8mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1A
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
25V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
700mW (Ta), 30W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-TSON Advance (3.3x3.3)
Package / Case
8-VDFN Exposed Pad

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