TPCF8102(TE85L,F,M

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Overview of TPCF8102(TE85L,F,M

Part NumberTPCF8102(TE85L,F,M
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET P-CH 20V 6A VS-8
DatasheetsDownload TPCF8102(TE85L,F,M Datasheet PDFPDF Icon
Price for TPCF8102(TE85L,F,M

Specification of TPCF8102(TE85L,F,M

Status
Obsolete
Series
U-MOSIII
Package
Tape & Reel (TR)
Supplier
Toshiba Semiconductor and Storage
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
30mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 200A
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
1550 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
700mW (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
VS-8 (2.9x1.5)
Package / Case
8-SMD, Flat Lead

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