TPH3206LDGB

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Overview of TPH3206LDGB

Part NumberTPH3206LDGB
ManufacturerTransphorm
DescriptionGANFET N-CH 650V 16A PQFN
DatasheetsDownload TPH3206LDGB Datasheet PDFPDF Icon
Price for TPH3206LDGB

Specification of TPH3206LDGB

Status
Obsolete
Package
Tube
Supplier
Transphorm
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 8V
Vgs(th) (Max) @ Id
2.6V @ 500A
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 4.5 V
Vgs (Max)
18V
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 480 V
FET Feature
-
Power Dissipation (Max)
81W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PQFN (8x8)
Package / Case
3-PowerDFN

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